Physical Review B 2000, 61:13840–13851 CrossRef 9 Rosenauer A, O

Physical Review B 2000, 61:13840–13851.CrossRef 9. Rosenauer A, Oberst W, Litvinov D, Gerthsen D, Forster A, Schmidt R: Structural and chemical investigation of In(0.6)Ga(0.3)As Stranski-Krastanow layers buried in GaAs by transmission electron microscopy. Physical Review B 2000, 61:8276–8288.CrossRef 10. Fry PW, Itskevich IE, Mowbray DJ, Skolnick MS, Finley JJ, Barker JA, O’Reilly EP, Wilson LR, Larkin IA, Maksym PA, Hopkinson M, Al-Khafaji M, David JPR, Cullis AG, Hill G, Clark JC: Inverted electron–hole alignment in InAs-GaAs self-assembled quantum dots. Phys Rev Lett 2000, 84:733–736.CrossRef 11. Nuntawong N, Tatebayashi J, Wong PS, Huffaker

DL: Localized strain reduction in strain-compensated InAs/GaAs stacked quantum

dot structures. Appl Phys Lett 2007, 90:163121.CrossRef 12. Alonso-Alvarez D, Taboada AG, Ripalda JM, Alen B, Gonzalez Omipalisib concentration Y, Gonzalez L, Garcia JM, Briones F, Marti A, Luque A, Sánchez AM, Molina SI: Carrier recombination effects in strain compensated quantum dot stacks embedded in solar cells. Appl Phys Lett 2008, 93:123114.CrossRef 13. Jin-Phillipp NY, Phillipp F: Strain distribution in self-assembled InP/GaInP quantum dots. J Appl Phys 2000, 88:710–715.CrossRef 14. Srinivasan T, Singh SN, Tiwari U, Sharma RK, Muralidharan R, Rao DVS, Balamuralikrishnan R, Muraleedharan K: Structural and photoluminescence ISRIB supplier characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots. J Cryst Growth 2005, 280:378–384.CrossRef 15. Ouattara L, Ulloa JM, Mikkelsen A, Lundgren E, Koenraad PM, Borgstrom M, Samuelson L, Seifert W: Correlation lengths in stacked InAs quantum dot systems studied Selleckchem TPCA-1 by cross-sectional scanning tunnelling microscopy. Nanotechnology 2007, 18:145403.CrossRef 16. Molina SI, Ben T, Sales DL, Pizarro J, Galindo PL, Varela M, Pennycook SJ, Fuster D, Gonzalez Y, Gonzalez L: Determination of the strain generated PRKACG in InAs/InP quantum wires: prediction of nucleation sites. Nanotechnology 2006, 17:5652–5658.CrossRef 17. Shoji Y, Oshima R, Takata A, Okada Y: The effect

of spacer layer thickness on vertical alignment of InGaAs/GaNAs quantum dots grown on GaAs(3 1 1)B substrate. Physica E 2010, 42:2768–2771.CrossRef 18. Gutierrez M, Herrera M, Gonzalez D, Garcia R, Hopkinson M: Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices. Appl Phys Lett 2006, 88:193118.CrossRef 19. Radon J: Ueber die Bestimmung von Funktionen durch ihre integralwerte laengs gewisser Mannigfaltigkeiten. Math-Phys Kl 1917, 69:262–277. 20. Lozano-Perez S: A guide on FIB preparation of samples containing stress corrosion crack tips for TEM and atom-probe analysis. Micron 2008, 39:320–328.CrossRef 21. Ke XX, Bals S, Cott D, Hantschel T, Bender H, Van Tendeloo G: Three-dimensional analysis of carbon nanotube networks in interconnects by electron tomography without missing wedge artifacts. Microsc Microanal 2010, 16:210–217.CrossRef 22.

Leave a Reply

Your email address will not be published. Required fields are marked *


You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <strike> <strong>