In order to elucidate the conduction mechanisms of the device, th

In order to elucidate the conduction mechanisms of the device, the I-V curve is plotted in KU-60019 datasheet the double-logarithmic mode, both the positive and negative bias regions, as shown in Figure 8a,b, respectively. The conduction mechanism being responsible for charge transport in the low-voltage region involves ohmic behavior (since n = 1), but it is different in the medium- and high-voltage regions for the device, where the conduction behavior can be well

described by the space charge-limited current (SCLC) theory [31–36]. Ohmic conduction in LRS is assumed to be caused by the oxygen vacancies which probably provide shallow energy levels below the conduction band edge. The SCLC mechanism BAY 63-2521 manufacturer is generally observed when the electrode contacts are highly carrier injecting. Due to the formation of an interfacial ZrO y layer between Zr and CeO x films, the conduction mechanism in the device behaves according to the SCLC theory since the ZrO y layer is known to provide electron trapping sites and to control the conductivity by trapping and

detrapping. Figure 8 I – V curves of the Zr/CeO x /Pt memory device are displayed in double-logarithmic scale. The linear fitting FLT3 inhibitor results in both ON state and OFF state: (a) positive-voltage region and (b) negative-voltage region. The corresponding slopes for different portions are also shown. Conclusions Resistive switching characteristics of the Zr/CeO x /Pt memory device were demonstrated at room temperature. The conduction mechanisms for low- and high-resistance states are revealed by ohmic behavior and trap-controlled space charge-limited

current, respectively. Selleck Forskolin Oxygen vacancies presented in the CeO x film and an interfacial ZrO y layer was formed, as confirmed by XPS and EDX studies. Long retention (>104 s) at 85°C and good endurance with a memory window of HRS/LRS ≥ 40 were observed. This device has high potential for nonvolatile memory applications. Acknowledgements The authors acknowledge the financial support by the Higher Education Commission (HEC), Islamabad, Pakistan, under the International Research Support Initiative Program (IRSIP). This work was also supported by the National Science Council, Taiwan, under project NSC 99-2221-E009-166-MY3. References 1. Tseng TY, Sze SM (Eds): Nonvolatile Memories: Materials, Devices and Applications. Volume 2. Valencia: American Scientific Publishers; 2012:850. 2. Panda D, Tseng TY: Growth, dielectric properties, and memory device applications of ZrO 2 thin films. Thin Solid Film 2013, 531:1–20.CrossRef 3. Panda D, Dhar A, Ray SK: Nonvolatile and unipolar resistive switching characteristics of pulsed ablated NiO films. J Appl Phys 2010, 108:104513.CrossRef 4. Lin CY, Lee DY, Wang SY, Lin CC, Tseng TY: Reproducible resistive switching behavior in sputtered CeO 2 polycrystalline films. Surf Coat Technol 2009, 203:480–483.CrossRef 5.

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